intercrystalline barrier

Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films

ZnO薄膜紫外光敏特性及晶界勢壘的研究

The low B-value of the grains and insignificant grain boundary barrier give a good linear resistance-temperature characteristic of the composite within a temperature range of -20￣250℃.

由于復合材料的晶粒具有極小的Ｂ值而晶界勢壘也極小，使得該復合材料的電阻－溫度特性呈現出良好的線性特征。

A new interpretation for the origin the grain boundary barrier is oxide semiconductorceramics is proposed,It is suggested by the authors that the barrier originates from the dif-fusion of excess oxygen in grain boundaries during sintering.

提出了一個關于氧化物半導瓷晶界勢壘起源的新觀點，認為晶界勢壘起源于燒結過程中外界氧在晶界中的擴散，與材料的結構、化學缺陷、摻雜、外界氣氛、燒結工藝、組成狀態等有密切關系，并用此理論解釋了許多實驗現象。

It is believed that the grain-boundary barrier of the thin.

結果表明,適當的摻雜量可以改善CdTe薄膜的結晶性能,降低晶界勢壘高度,提高其導電性能。

The results show that the decomposition accompanying with oxidation is useful forincreasing the surface state density and the height of grain-boundary barrier, and therefore improves the nonlinear property of TiO_2 capacitor.

結果發現，在晶界處發生的熱分解氧化反應能增加界面態密度，提高晶界勢壘高度，從而改善ＴｉＯ２電容壓敏電阻器的非線性性能。

The carrier transport characteristics of the InN thin films have been explained successfully on the basis of a grain-boundary barrier model, where the accumulation of holes at the grain boundaries has been found to play a key role.

在晶界勢壘模型的基礎上 ,發現InN薄膜的電導特性取決于材料內部的晶界勢壘高度 ,載流子輸運特性是由于空穴在晶界處的積累決定的 。

Study on the UV photo-sensitive characteristic and grain boundary barrier of ZnO thin films

ZnO薄膜紫外光敏特性及晶界勢壘的研究

Capacitance-voltage measurement of grain-boundary barrier in TiO2 varistors;

電容—電壓測試在TiO_2壓敏材料晶界勢壘研究中的應用

The Schottky Barrier at Grain Boundaries of Polycrystalline Ferroelectric Semiconductors

多晶鐵電半導體晶界處的肖特基勢壘

schottky gate fet

肖特基勢壘柵場效應晶體管

enhancement type schottky barrier fet

增強型肖特基勢壘場效應晶體管

Study on Nucleation Potential Barrier of Amorphous Si Crystallization by Laser Annealling

激光退火實現非晶Si晶化的成核勢壘研究

Influence of barrier height of the front contact on the amorphous silicon and microcrystalline silicon heterojunction solar cells

前端接觸勢壘高度對非晶硅和微晶硅異質結太陽電池的影響

PROGRESS ON FIRST-PRINCIPLES CALCULTIONS AND EXPERIMENTAL RESULTS OF SINGLE-CRYSTALLINE MAGNETIC TUNNEL JUNCTIONS WITH MgO BARRIERS

MgO單晶勢壘磁性隧道結的第一性原理計算和實驗研究

We adopted the pseudopotential method and the first principle to calculate the alloy disorder effect of the atoms surrounding the impurity atoms.

采用第一原理贗勢法計算，分析和討論了混晶無序效應對電子熱俘獲勢壘精細結構的影響。

Influence of Metal/Organic Interface Barriers on the EL Efficiency in Single-layer Organic EL Devices

金屬 /有機界面勢壘對單層有機電致發光器件發光效率的影響(英文)

A type of transistor in which very thin barriers ( by means of etching techniques ) are used, thus permitting the frequency range to be extended to 100 MHz.

使用很薄勢壘的一類晶體管(采用刻蝕技術),因而,其使用頻率范圍可達100兆赫。

schottky barrier photodiode

肖特基勢壘光電二極管

cottrell lomer barrier

科特雷耳 洛末勢壘

metal semiconductor barrier

金屬 半導體接觸勢壘

ping-pong memory

乒乓式電位勢壘存儲器

The ISF is the world governing body of softball.

國際壘球聯合會是壘球的世界性管理機構。

schottky barrier mos

肖特基勢壘柵金屬氧化物半導體

Schottky-barrier avalanche photodiode

肖特基勢壘雪崩光電二極管