Many sulphides, selenides, and tellurides have the nickel arsenide's NiAs type of structure.
許多硫化物, 硒化物和碲化物具有砷化鎳NiAs型的結構.
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The material is a semiconductor called gallium manganese arsenide.
這種材料是一種叫做鎵錳砷化物的東東.
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This paper describes the toxicity and harm of hydrogen arsenide.
介紹了砷化氫的毒性及危害性.
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Gallium arsenide cells of laboratory efficiency up to 21 %, 18 % up to mass production.
砷化鎵電池的實驗室效率可達21%, 批量生產可達18%.
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This was really exciting because the low - loss region is right at the gallium - arsenide laser emission band.
這實在令人振奮,因為低損耗窗口正處于砷化鎵激光器的發光波段.
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Hydrogen arsenide released unavoidably during electrowinning with copper electrolyte purified conventionally pollutes the environment seriously.
傳統的銅電解后液凈化方法電積時不可避免地析出砷化氫,嚴重污染環境.
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Some common intrinsic semiconductors are single crystals of silicon, germanium, and gallium arsenide.
常用的本質半導體是硅 、 鍺以及砷化鎵等的單晶.
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