electronic transfer accounts

Development of an electronic optometer based on SCM;

單片機電子視力計的研制

Clinical analysis on liposuction adopting electronic liposuction machine;

醫用電子去脂機行抽脂術臨床效果分析

Research on the development of automobile electronic information industry ——based on the theory of industry growth;

基于產業成長理論的中國汽車電子信息產業發展研究

Mixed proton-electron conductors for hydrogen permeation;

質子-電子混合導體透氫膜

Study of ion catch technology of electron microscopy in virus detection of patient s excrement;

離子撲捉電子顯微鏡技術檢測患者糞便中病毒的方法

Teaching research on electric and electron speciality oriented art recruiting students;

面向文科招生的電氣、電子專業教學研究

A comparison of ionizing radiation damage in CMOS devices from ~(60)Co Gamma rays,electrons and protons;

CMOS器件~(60)Coγ射線、電子和質子電離輻射損傷比較

In order to study avalanche ionization mechanism, it is inevitable to deal with rates of electrons absorbing and losing energy.

研究雪崩破壞機理,必然涉及到電子吸收激光能量的速率和電子損耗能量的速率,這些都與電子和聲子的散射有密切的聯系。

N-channel MOS transistors from CC4007,CC4011 and LC54HC04RH device were irradiated with different dose rate Co-60 gamma rays,lower energy protons(less then 9MeV)and 1MeV electrons.

利用不同劑量率γ射線、低能 (小于 9MeV)質子和 1MeV電子對CC40 0 7RH、CC40 11、LC5 4HC0 4RHNMOS FET進行了輻照實驗 ,結果表明 ,在 +5V偏置條件下 ,9MeV以下質子造成的損傷總是小于60 Co,而且質子能量越低 ,損傷越小 ;對于同等的吸收劑量 ,1MeV電子和60 Co造成的損傷差別不大 ;在高劑量率γ射線輻射下 ,氧化物陷阱電荷是導致器件失效的主要原因 ,在接近空間低劑量率輻射環境下 ,LC5 4HC0 4RH電路失效的主要原因是輻射感生界面態陷阱電荷 ,而CC40 0 7RH器件則是氧化物陷阱電荷 。